Multilevel Magnetization Switching in a Dual Spin Valve Structure
نویسندگان
چکیده
Here, we describe a dual spin valve structure with distinct switching fields for two pinned layers. A device with this structure has a staircase of three distinct magnetoresistive states. The multiple resistance states are achieved by controlling the exchange coupling between two ferromagnetic pinned layers and two adjacent antiferromagnetic pinning layers. The maximum magnetoresistance ratio is 7.9% for the current-perpendicular-toplane and 7.2% for the current-in-plane geometries, with intermediate magnetoresistance ratios of 3.9% and 3.3%, respectively. The requirements for using this exchange-biased stack as a three-state memory device are also discussed.
منابع مشابه
Switching magnetization of a nanoscale ferromagnetic particle using nonlocal spin injection.
We have performed nonlocal spin injection into a nanoscale ferromagnetic particle configured in a lateral spin-valve structure to switch its magnetization only by spin current. The nonlocal spin injection aligns the magnetization of the particle parallel to the magnetization of the spin injector. The spin current responsible for switching is estimated from the experiment to be about 200 microA,...
متن کاملMagneto-optical indicator film study of the magnetization of a symmetric spin valve
L.H. Bennett, P.J. Chen, R.D. McMichael, M.J. Donahue, L.J. Swartzendruber, A.J. Shapiro, H.J. Brown, W.F. Egelhoff, Jr. National Institute of Standards and Technology, Gaithersburg, MD, 20899, USA Abstract A magneto-optical indicator film (MOIF) technique is used for direct experimental study of the magnetization reversal process in a symmetric NiO/Co/Cu/NiFe/Cu/Co/NiO spin valve. It is shown ...
متن کاملQuasiballistic magnetization reversal.
We demonstrate a quasiballistic switching of the magnetization in a microscopic magnetoresistive memory cell. By means of time resolved magnetotransport, we follow the large angle precession of the free layer magnetization of a spin valve cell upon application of transverse magnetic field pulses. Stopping the field pulse after a 180 degrees precession rotation leads to magnetization reversal wi...
متن کاملReducing the critical switching current in nanoscale spin valves
The current induced magnetization reversal in nanoscale spin valves is a potential alternative to magnetic field switching in magnetic memories. We show that the critical switching current can be decreased by an order of magnitude by strategically distributing the resistances in the magnetically active region of the spin valve. In addition, we simulate full switching curves and predict a new pr...
متن کاملMagnetization Dynamics Symmetry in Spin Torque Induced Magnetization Switching
Magnetization dynamics symmetry plays important roles in magnetization switching. Here we study magnetic field and spin torque induced magnetization switching. Spin moment transferring from polarized itinerant electrons to local magnetization provides a magnetization switching mechanism without using external magnetic field. Besides its importance in fundamental magnetization switching dynamics...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
عنوان ژورنال:
دوره شماره
صفحات -
تاریخ انتشار 2011